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- W2313644015 abstract "Among the major obstacles for development of non-polar and semipolar GaN structures on foreign substrates are stacking faults which deteriorate the structural and optical quality of the material. In this work, an in-situ SiNx nano-network has been employed to achieve high quality heteroepitaxial semipolar (112¯2) GaN on m-plane sapphire with reduced stacking fault density. This approach involves in-situ deposition of a porous SiNx interlayer on GaN that serves as a nano-mask for the subsequent growth, which starts in the nanometer-sized pores (window regions) and then progresses laterally as well, as in the case of conventional epitaxial lateral overgrowth (ELO). The inserted SiNx nano-mask effectively prevents the propagation of defects, such as dislocations and stacking faults, in the growth direction and thus reduces their density in the overgrown layers. The resulting semipolar (112¯2) GaN layers exhibit relatively smooth surface morphology and improved optical properties (PL intensity enhanced by a f..." @default.
- W2313644015 created "2016-06-24" @default.
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- W2313644015 date "2016-04-14" @default.
- W2313644015 modified "2023-10-02" @default.
- W2313644015 title "Improvement of optical quality of semipolar (112¯2) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth" @default.
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- W2313644015 doi "https://doi.org/10.1063/1.4945770" @default.
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