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• W2313826023 endingPage "017303" @default.
• W2313826023 startingPage "017303" @default.
• W2313826023 abstract "The degradation mechanism of enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by fluorine plasma ion implantation technology is one major concern of HEMT’s reliability. It is observed that the threshold voltage shows a significant negative shift during the typical long-term on-state gate overdrive stress. The degradation does not originate from the presence of as-grown traps in the AlGaN barrier layer or the generated traps during fluorine ion implantation process. By comparing the relationships between the shift of threshold voltage and the cumulative injected electrons under different stress conditions, a good agreement is observed. It provides direct experimental evidence to support the impact ionization physical model, in which the degradation of E-mode HEMTs under gate overdrive stress can be explained by the ionization of fluorine ions in the AlGaN barrier layer by electrons injected from 2DEG channel. Furthermore, our results show that there are few new traps generated in the AlGaN barrier layer during the gate overdrive stress, and the ionized fluorine ions cannot recapture the electrons." @default.
• W2313826023 created "2016-06-24" @default.
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• W2313826023 date "2015-01-01" @default.
• W2313826023 modified "2023-09-27" @default.
• W2313826023 title "Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress" @default.
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• W2313826023 doi "https://doi.org/10.1088/1674-1056/24/1/017303" @default.
• W2313826023 hasPublicationYear "2015" @default.
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