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- W2314440199 abstract "ビニルシランの励起状態の電子構造とプラズマ反応性の相関について検討した。MNDO分子軌道法による二中心結合エネルギーと局在化分子軌道エネルギーの計算結果から,最低励起状態では,オレフィン結合のπ部分が開裂し,第二励起状態では,Si-C結合が伸びて弱くなることが示唆された。特に三重項励起状態において,その傾向が強い。最低励起三重項状態への励起エネルギーは,他の励起状態よりかなり低く,ビニルシランの化学反応を誘起する励起エネルギーを低エネルギー側に絞れば,この励起状態を経由する反応がかなり選択的に起こることが予測される。高周波プラズマによるグロー放電分解の実験結果は,この計算による予測によく対応した。生成薄膜のXPSおよびIRスペクトルから,低パワーにおいてはオレフィン結合のπ部分の開裂により炭素骨格が形成され,パワーを上げていくとSi-C結合の切断が起こり,C/Si比を連続的に変化させてa-Sic膜を形成することができた。" @default.
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- W2314440199 date "1990-01-01" @default.
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- W2314440199 title "Special articles on new aspects of silicon chemistry. The electronic state at excited states and the plasma chemical reactivity of vinylsilane." @default.
- W2314440199 doi "https://doi.org/10.1246/nikkashi.1990.531" @default.
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