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• W2314442952 endingPage "1826" @default.
• W2314442952 startingPage "1821" @default.
• W2314442952 abstract "Extrinsic parasitic series resistance and mobility degradation are two important parameters limiting the performance of multifinger microwave MOSFETs. In this paper, we present a method to extract these parameters from measured drain-voltage versus gate-voltage characteristics at given constant values of drain current. Measured data of multifinger microwave MOSFETs are used to test and verify the developed method. The method requires only simple dc measurements on a single test device." @default.
• W2314442952 created "2016-06-24" @default.
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• W2314442952 date "2016-05-01" @default.
• W2314442952 modified "2023-09-23" @default.
• W2314442952 title "A DC Method to Extract Mobility Degradation and Series Resistance of Multifinger Microwave MOSFETs" @default.
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• W2314442952 doi "https://doi.org/10.1109/ted.2016.2538778" @default.
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