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- W2314808082 abstract "We report the crystalline quality and electrical properties of PbZr 1- x Ti x O 3 (PZT) films on Si substrates with epitaxially grown CeO 2 buffer layers. CeO 2 buffer layers were deposited by the electron-beam-assisted evaporation technique, and PZT films were formed by the sol-gel technique. It is shown that CeO 2 buffer layers, which were epitaxially grown on Si(111) substrates at 500°C, effectively suppressed Si and Pb interdiffusion between PZT films and Si substrates. Furthermore, the capacitance-voltage and current-voltage properties of PZT/CeO 2 /Si indicated a ferroelectric nature and excellent breakdown strength." @default.
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- W2314808082 date "1996-09-01" @default.
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- W2314808082 title "Preparation and Characterization of PZT Thin Films on CeO<sub> 2</sub>(111)/Si(111) Structures" @default.
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- W2314808082 doi "https://doi.org/10.1143/jjap.35.4987" @default.
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