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• W23149309 abstract "Silicon (Si) power metal-oxide-semiconductor field-effect transistors (MOSFETs) are widely used in audio and radio frequency (rf) amplifiers, switch mode power supplies (SMPS), power factor correction (PFC) circuits, lamp ballasts and many types of control circuits. Power MOSFETs have several desirable characteristics such as (a) high switching speed due to the absence of minority carrier storage, (b) voltage controlled input, and (c) ease of paralleling due to the negative temperature coefficient of the on-state current. Power MOSFETs have largely replaced bipolar junction transistors (BJTs) in medium power (<20 kW) applications requiring high switching speeds (>10 kHz). In contrast to a power MOSFET, a power BJT requires a large continuous base current to turn it on and keep it on. The base current requirement can be as high as 25% of the collector current. It is difficult to parallel power BJTs due to the fact that the on-state current increases with temperature making the current sharing between different transistors unequal. Furthermore, the switching speed of BJTs is much slower than power MOSFETs due to the storage of minority carriers in the base and collector regions. Thus, the switching losses become prohibitively high at switching frequencies higher than 10–20 kHz." @default.
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• W23149309 date "2004-01-01" @default.
• W23149309 modified "2023-10-14" @default.
• W23149309 title "Power MOSFETs in 4H-SiC: Device Design and Technology" @default.
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• W23149309 doi "https://doi.org/10.1007/978-3-642-18870-1_33" @default.
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