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- W2315444889 abstract "Doping effects of group-III and -V element on the a-Si films prepared by “high” pressure rf sputtering were studied. Three different types of doping effects on conductivity were observed for different elements. One is the increase of conductivity due to the shift of the Fermi level, another is the increase of conductivity due to the increase of hopping sites contributing to variable range hopping conduction and the third is that doping is less effective on conductivity. Distinct adsorption effects on conductance were observed for the cases of B- or Al-doping. These phenomena indicate that the band-bending is caused in surface regions by adsorbates because of a relatively small density of localized gap states, so the formation of built-in potential due to Schottky barrier or p-n junction would be possible for those a-Si films prepared by “high” pressure rf sputtering." @default.
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- W2315444889 date "1980-01-01" @default.
- W2315444889 modified "2023-09-23" @default.
- W2315444889 title "Doping Effects of Group-III and -V Element on a-Si Prepared by High Pressure rf Sputtering" @default.
- W2315444889 doi "https://doi.org/10.7567/jjaps.19s2.85" @default.
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