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- W2315675082 abstract "Abstract We fabricated a Y 2 O 3 –ZrO 2 film (YZO) on Al 2 O 3 to achieve the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30 cm/s after annealing at 400 °C. This improvement can be attributed to the effective fixed charge enhancement while the interface state densities were kept almost constant. A high thermal tolerance of over 600 °C upon inserting a 2-nm-thick ZrO 2 layer between the YZO and Al 2 O 3 interface was confirmed. This result showed that the ZrO 2 layer acts as a protective barrier to prevent Al and Y interdiffusions. Annealing at a higher temperature of 800 °C resulted in interface degradation and YZO crystallization, which led to the deterioration of the passivation properties." @default.
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- W2315675082 date "2016-03-02" @default.
- W2315675082 modified "2023-09-25" @default.
- W2315675082 title "Investigation of new stacking surface passivation structures with interfacial tuning layers on p-type crystalline silicon" @default.
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- W2315675082 doi "https://doi.org/10.7567/jjap.55.04es03" @default.
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