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• W2315763154 abstract "In this work, 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (0.5BZT–0.5BCT) thin films were synthesized at 500 °C by introducing a seed layer. Low interfacial diffusion and high (100) orientation were simultaneously achieved. Minimal leakage current density, dielectric constant, and loss were obtained owing to low crystallization temperature and low interfacial diffusion. The pyroelectric coefficient remained relatively high because of the high orientation, which resulted in superior pyroelectric figures of merit compared with previously reported films. This study demonstrates that low-temperature crystallization can suppress interfacial diffusion and extend film applications by integrating the films with silicon substrates and that thin films annealed at 500 °C are good candidates for application in uncooled infrared detectors." @default.
• W2315763154 created "2016-06-24" @default.
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• W2315763154 date "2014-07-08" @default.
• W2315763154 modified "2023-10-16" @default.
• W2315763154 title "Interface Optimization and Electrical Properties of 0.5Ba(Zr_0.2Ti_0.8)O₃–0.5(Ba_0.7Ca_0.3)TiO₃ Thin Films Prepared by a Sol–Gel Process" @default.
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• W2315763154 doi "https://doi.org/10.1021/jp5036103" @default.
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