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- W2315815744 endingPage "1631" @default.
- W2315815744 startingPage "1583" @default.
- W2315815744 abstract "Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena." @default.
- W2315815744 created "2016-06-24" @default.
- W2315815744 creator A5029658476 @default.
- W2315815744 creator A5060167925 @default.
- W2315815744 date "2013-11-14" @default.
- W2315815744 modified "2023-10-09" @default.
- W2315815744 title "Defect identification in semiconductors with positron annihilation: Experiment and theory" @default.
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