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- W2316201210 abstract "Journal Article Quantitative Strain Measurement in Semiconductor Devices by Scanning Moiré Fringe Imaging Get access Suhyun Kim, Suhyun Kim Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea Search for other works by this author on: Oxford Academic Google Scholar Sungho Lee, Sungho Lee Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea Search for other works by this author on: Oxford Academic Google Scholar Younheum Jung, Younheum Jung Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea Search for other works by this author on: Oxford Academic Google Scholar Joong Jung Kim, Joong Jung Kim Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea Search for other works by this author on: Oxford Academic Google Scholar Gwangseon Byun, Gwangseon Byun Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea Search for other works by this author on: Oxford Academic Google Scholar Sunyoung Lee, Sunyoung Lee Memory Analysis Science & Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea Search for other works by this author on: Oxford Academic Google Scholar Heabum Lee Heabum Lee Memory Yield Enhancement Team, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701, Korea Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 20, Issue S3, 1 August 2014, Pages 1052–1053, https://doi.org/10.1017/S1431927614006989 Published: 27 August 2014" @default.
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- W2316201210 date "2014-08-01" @default.
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- W2316201210 title "Quantitative Strain Measurement in Semiconductor Devices by Scanning Moiré Fringe Imaging" @default.
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