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- W2316432962 abstract "The time evolution of surface gratings on $mathrm{GaAs}(001)$ during maskless thermal ${mathrm{Cl}}_{2}$ etching is investigated using atomic force microscopy and real-time measurements of diffracted light intensity. The decay of the grating depends strongly on its orientation with respect to the crystal axes. The pattern transfer can be altered significantly by using a directional molecular beam of ${mathrm{Cl}}_{2}$ instead of exposure to a nondirectional low-pressure gas phase. In particular, if the molecular beam is incident on the sample from an off-normal direction, the grating shape develops a strong asymmetry. A numerical model consisting of two coupled partial differential equations for the surface height and the concentration of chlorine on the surface is in good quantitative agreement with the observed shape evolution. The model includes the effects of the crystal anisotropy of the etch rate, spatial inhomogeneity of the ${mathrm{Cl}}_{2}$ flux to the surface, and surface diffusion of the chlorine. Fits of the model to the surface shapes allow us to determine the diffusion length of chlorine on $mathrm{GaAs}(001)$ to be on the order of $50phantom{rule{0.3em}{0ex}}mathrm{nm}$ at 200 ifmmode^circelsetextdegreefi{}C." @default.
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- W2316432962 date "2004-07-23" @default.
- W2316432962 modified "2023-09-26" @default.
- W2316432962 title "Surface pattern transfer inGaAswith molecular beams ofCl2" @default.
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- W2316432962 doi "https://doi.org/10.1103/physrevb.70.045315" @default.
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