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• W2316486018 abstract "We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (VTH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of VTH shift was considered the charge trapping and VTH shift along with time was well fitted to a stretched-exponential model. The VTH shift was suppressed with a reduction of trap density by employing N2O plasma treatment on the gate insulator." @default.
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• W2316486018 date "2012-01-01" @default.
• W2316486018 modified "2023-09-23" @default.
• W2316486018 title "Effect of Charge Trapping∕Detrapping on Threshold Voltage Shift of IGZO TFTs under AC Bias Stress" @default.
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• W2316486018 doi "https://doi.org/10.1149/2.026204esl" @default.
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