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- W2316647219 abstract "We investigated the effect of small-molecule layer thickness on nonvolatile memory characteristics such as memory margin, retention-time, and multi-level memory-cell operation for cross-bar 4F2 small-molecule memory-cells embedded with Ni nanocrsystals surrounded by a NiO tunneling barrier. For a 50-nm small-molecule layer, the memory-cell demonstrated a memory margin of ∼ 7.02 × 103 and a retention-time of ∼ 105 s at 85°C for four current levels. However, these nonvolatile memory characteristics worsened when the small-molecule layer thickness increased above 50-nm, and they eventually disappeared at ∼ 140-nm. This is related to current conduction mechanisms, such as space-charge-limited-current and thermionic-field-emission-current, which depend on small-molecule layer thickness." @default.
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- W2316647219 date "2011-01-01" @default.
- W2316647219 modified "2023-09-25" @default.
- W2316647219 title "Effect of Small-Molecule Layer Thickness on Nonvolatile Memory Characteristics for Small-Molecule Memory-cells" @default.
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- W2316647219 doi "https://doi.org/10.1149/1.3582801" @default.
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