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• W2316686688 startingPage "437" @default.
• W2316686688 abstract "Scanning capacitance microscopy (SCM) techniques to investigate the local electronic properties of the ultra-thin films are presented. In the first part, we show the application of SCM experiments for the high-permittivity (high-k) dielectric thin films. The static capacitance (dC/dZ) images and spatially resolved dC/dZ versus sample bias spectra have revealed the charge distributions within high-k dielectrics. Moreover, the bias stress examination has clearly imaged the charge-trapped region in the high-k stacked dielectrics. In the second part, we have demonstrated that the conductance variation ascribed to the graphene thickness can be probed through SCM measurements. The UHF field transmitted from SCM probe tip induces a local accumulation of carriers just beneath the tip. This causes carrier diffusion over the effective biased area of Seff on graphene films, which can be detected as the increment of dC/dZ signal intensity. These results indicate that our SCM technique provides a valuable method to explore the electronic characteristics of low-dimensional materials with nanoscale resolution." @default.
• W2316686688 created "2016-06-24" @default.
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• W2316686688 date "2011-01-01" @default.
• W2316686688 modified "2023-10-06" @default.
• W2316686688 title "Nano-scale Characterization of Ultra-thin Dielectrics/Conductive Films through Scanning Capacitance Microscopy Studies" @default.
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• W2316686688 doi "https://doi.org/10.3131/jvsj2.54.437" @default.
• W2316686688 hasPublicationYear "2011" @default.
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