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- W2317074487 abstract "Für das selektive chemische Ätzen des InP-Substrates im III-V-System GaInAsP/InP wird ein neues Ätzmittel, bestehend aus HCl und H3PO4 vorgeschlagen und eine detaillierte Beschreibung seiner Anwendung vorgenommen." @default.
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- W2317074487 date "1979-05-15" @default.
- W2317074487 modified "2023-10-14" @default.
- W2317074487 title "ChemInform Abstract: MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE (INGAASP/INP)" @default.
- W2317074487 cites W1976370171 @default.
- W2317074487 doi "https://doi.org/10.1002/chin.197920013" @default.
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