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• W2317366203 abstract "Development of ‘data storage device’ using semiconductor based technology has always been gaining significant interests from the researchers engaged in this field. The scope of research in this field was further enhanced by the introduction of nano particle based techniques. Metal-Oxide-Semiconductor (MOS) structure provides the primary guidance in developing such devices. Design of a low cost nano particle based ‘Charge trapping memory’ device will be described which is expected to have superior characteristics than the conventional ones. The basic idea behind the proposed device is to find out a way to replace the continuous polysilicon floating gate of the flash cells with discrete nano crystal layer by using a Polyvinyl alcohol (PVA) capped ZnO nano particles. The basic structure of the memory cell is analogous to the charge trapping MOS transistor except the charge trapping layer being replaced by discrete nano particles. This will allow reducing the thickness of the tunneling oxide without effecting the endurance, reliability and performance of the device." @default.
• W2317366203 created "2016-06-24" @default.
• W2317366203 creator A5030074312 @default.
• W2317366203 date "2013-01-25" @default.
• W2317366203 modified "2023-09-24" @default.
• W2317366203 title "NANOPARTICLE BASED CHARGE TRAPPING MEMORY DEVICE APPLYING MOS TECHNOLOGY: A COGNITIVE APPROACH USING POLYVINYL ALCOHOL CAPPED ZINC OXIDE NANOCRYSTAL" @default.
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• W2317366203 doi "https://doi.org/10.15623/ijret.2013.0201008" @default.
• W2317366203 hasPublicationYear "2013" @default.
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