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- W2317532707 abstract "Hard x-ray photoelectron spectroscopy (HAXPES) has been used to study metal-oxide-semiconductor (MOS) structures fabricated with both high (Ni) and low (Al) work-function metals on 8-nm thick Al${}_{2}$O${}_{3}$ dielectric layers, deposited on sulfur passivated $n$- and $p$-doped GaAs substrates. A binding energy difference of 0.6 eV was measured between the GaAs core levels of the $n$- and $p$-doped substrates in the absence of gate metals, indicating different Fermi level positions in the band gap. Subsequent photoemission measurements made on the MOS structures with the different work-function metals displayed very limited change in the GaAs core level binding energies, indicating that the movement of the Fermi level at the Al${}_{2}$O${}_{3}$/GaAs interface is restricted. Using a combination of HAXPES measurements and theoretical calculations, the Fermi level positions in the band gap have been determined to be in the range of 0.4--0.75 eV and 0.8--1.11 eV above the valence band maximum for $p$- and $n$-type GaAs, respectively. Analysis of capacitance voltage (C-V) measurements on identically prepared samples yield very similar Fermi level positions at zero applied gate bias. The C-V analysis also indicates a higher interface defect density ($D$${}_{it}$) in the upper half of the GaAs bandgap." @default.
- W2317532707 created "2016-06-24" @default.
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- W2317532707 date "2013-07-30" @default.
- W2317532707 modified "2023-10-14" @default.
- W2317532707 title "Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>O<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>/GaAs(100) metal-oxide-semiconductor structures" @default.
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- W2317532707 doi "https://doi.org/10.1103/physrevb.88.045322" @default.
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