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- W2317595004 abstract "High-strain Si-pillars are desirable for achieving high-speed three-dimensional transistors. The effects of postannealing (400–1150°C) on strain-enhancement in Si-pillars covered with Si3N4 stress-liners are investigated. Before annealing, the Si3N4 stress-liners induce strain in Si, where the direction of strain, which can be compressive or tensile, depends on the Si3N4 deposition parameters. After postannealing (>800°C), the strain becomes highly compressive, because of dehydrogenation-induced structural relaxation in Si3N4 films. Consequently, compressive strains (̃1.6%) are induced in the 200-nm-thick Si-pillars covered in 200-nm-thick Si3N4 films after high temperature postannealing (1000–1150°C). This strain-enhancement technique is useful for the realization of advanced high-speed three-dimensional transistors." @default.
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- W2317595004 date "2011-04-01" @default.
- W2317595004 modified "2023-10-17" @default.
- W2317595004 title "Dehydrogenation-Enhanced Large Strain (1.6%) in Si Pillars Covered by Si3N4 Stress Liners" @default.
- W2317595004 doi "https://doi.org/10.1149/1.3551465" @default.
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