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- W2318041030 abstract "We performed detailed resistivity and impedance spectroscopy studies of epitaxial (100) VO${}_{2}$ films. As the metal-insulator transition (MIT) is approached from below, the dielectric constant collapses concomitantly with a sharp increase in conductivity, revealing the coexistence of metallic and insulating phases. At lower temperatures transport in the insulating phase can be explained by small polaron hopping, with an activation scale significantly smaller than the semiconducting gap. We propose that closer to the MIT transport is dominated by polarons tunneling between metallic regions. Our results stress the critical importance of the metal-insulator phase coexistence and electronic motion coupled with ionic displacement in determining the transport behavior." @default.
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- W2318041030 date "2012-09-26" @default.
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- W2318041030 title "Metal-insulator transition in epitaxial VO<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>thin films on TiO<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>(100)" @default.
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- W2318041030 doi "https://doi.org/10.1103/physrevb.86.094114" @default.
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