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• W2318307859 startingPage "7826" @default.
• W2318307859 abstract "In this report, we have investigated on the defect state of diborane (B2H6) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiO:H) films prepared using silane (SiH4), hydrogen (H2) and nitrous oxide (N2O) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system with different hydrogen dilutions. The films prepared with higher hydrogen dilution show lower Urbach energy (Eu), lower microstructure (R*), lower short and medium range disorder (omegaTO, Gamma(TO), I(TA)/I(TO), I(LA)/I(TO)), higher dark conductivity (sigma d) and higher refractive index (n) with high optical gap (Eg). Eu decreases from 248 meV to 153 meV, and R* decreases from 0.46 to 0.26, Raman peak omegaTO-TO mode position shifts from 480.24 to 483.28, GammaTO-full width half maximum of omegaTO decreases from 78.16 to 63.87, I(TA)/I(TO)-the ratio of integrated area of TA and TO mode decreases from 0.624 to 0.474, I(LA)/I(TO)-the ratio of integrated area of LA and TO mode deceases from 0.272 to 0.151, sigma d increases from 4.6 x 10(-7) S/cm to 1.1 x 10(-6) S/cm, n increases from 3.70 to 3.86. Reduced Nd, Eu and R* at wide Eg indicates that the films are more useful for solar cell window layer. Applying this layer to a single junction solar cell shows open circuit voltage (Voc) = 0.80 V, short circuit current density (Jsc) = 16.3 mA/cm2, fill factor (FF) = 72%, efficiency (eta) = 9.4%." @default.
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• W2318307859 date "2013-12-01" @default.
• W2318307859 modified "2023-10-02" @default.
• W2318307859 title "Reduction of Tail State on Boron Doped Hydrogenated Amorphous Silicon Oxide Films Prepared at High Hydrogen Dilution" @default.
• W2318307859 cites W1574531666 @default.
• W2318307859 cites W1669819412 @default.
• W2318307859 doi "https://doi.org/10.1166/jnn.2013.8150" @default.
• W2318307859 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/24266147" @default.
• W2318307859 hasPublicationYear "2013" @default.
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