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• W2318372760 abstract "In this paper, we comparatively studied the energy band diagram and the cutoff wavelength characteristics of germanium-tin (GeSn) fin and pillar array detectors wrapped in a Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> liner stressor to unveil the impacts of tensile strain and device architecture in the absorption spectra of the devices. A large tensile strain is introduced into GeSn devices by the expansion of the Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> liner stressor. Compared to the fin detector, a larger tensile volume strain is demonstrated in the GeSn pillar architecture. With the tensile strain induced by the Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> liner stressor, the direct bandgap E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G,Γ</sub> of GeSn is obviously shrinked by lowering the energy of the Γ conduction band valley, which results in a significant extension of absorption edge in the GeSn detectors. As the Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> liner stressor releases internal stress and expands, the absorption edge of the tensile-strained Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.90</sub> Sn <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.10</sub> pillar array detector with the length of side of pillar L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>pillar</sub> of 100 nm is extended to 4.35 μm. With further improvement, the tensile-strained GeSn pillar architecture with the Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> liner stressor will be competitive for the application in 2-5-μm mid-infrared spectra." @default.
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• W2318372760 date "2015-12-01" @default.
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• W2318372760 title "Tensile-Strained Mid-Infrared GeSn Detectors Wrapped in Si ₃N ₄ Liner Stressor: Theoretical Investigation of Impact of Device Architectures" @default.
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• W2318372760 doi "https://doi.org/10.1109/jphot.2015.2492543" @default.
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