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• W2318769063 abstract "Diffusion mediated by native point defects does not generally occur in semiconductors at room temperature (RT) because of high activation energies. However, recently observed plastic deformation in AlGaN/GaN structures in the presence of strain and electric fields was attributed to diffusive processes. Here, we report first-principles calculations showing that strain has little effect, but RT mass transport is enabled by near-zero formation energy of triply negative cation vacancies and a concomitant electric-field-induced lowering of migration energy. Similar phenomena are predicted to occur in other large-gap materials." @default.
• W2318769063 created "2016-06-24" @default.
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• W2318769063 date "2011-12-20" @default.
• W2318769063 modified "2023-10-18" @default.
• W2318769063 title "Room-temperature diffusive phenomena in semiconductors: The case of AlGaN" @default.
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• W2318769063 doi "https://doi.org/10.1103/physrevb.84.214109" @default.
• W2318769063 hasPublicationYear "2011" @default.
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