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- W2318786902 abstract "High selectivity succinic acid: solution (SA) wet etching processes were used in the gate recess process to fabricate quaternary enhancement-mode pseudomorphic high electron mobility transistors (E-mode pHEMT). High uniformity of threshold voltage was achieved due to a high wet etching selectivity during gate recess process. In this study, we improved the power density and uniformity of the device by using wide bandgap Schottky layers. In addition, the best wet etching selectivity between GaAs and was obtained for large area power transistors. The developed long and wide gate FETs exhibited a of and a maximum drain current of . The maximum output power at was with a linear power gain of and a power-added efficiency of 60%. These characteristics demonstrate this novel E-mode pHEMTs have great potential for use in microwave power device applications." @default.
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- W2318786902 date "2006-02-01" @default.
- W2318786902 modified "2023-09-25" @default.
- W2318786902 title "High Uniformity ( Al0.3Ga0.7 ) 0.5In0.5P / InGaAs Enhancement-Mode Pseudomorphic HEMTs by Selective Succinic Acid Gate Recess" @default.
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- W2318786902 doi "https://doi.org/10.1149/1.2151168" @default.
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