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- W2319311755 abstract "単体半導体として知られているGeやSiのPn接合を用いた光電変換素子が, 光量子効率も高く光応答速度もかなり速いことに着目し, Si単結晶プレーナー技術を用いて分離独立した多数のPnまたはnPn接合をモザイク状に作り, これをターゲットとする新しいタイプの撮像管を試作し, 常温での撮像実験に成功した.またさらに, nPn形では電流利得が1を越えている事実を理論的にも実験的にもほぼ推定でき, 初期の目的とする低残像で電流利得が1を越す撮像管実現の見通しをたてることができた." @default.
- W2319311755 created "2016-06-24" @default.
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- W2319311755 date "1968-01-01" @default.
- W2319311755 modified "2023-09-26" @default.
- W2319311755 title "Camera Tube with Target Composed of Si Single Crystal Wafer" @default.
- W2319311755 doi "https://doi.org/10.3169/itej1954.22.280" @default.
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