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• W2320243641 abstract "A relatively simple and easy and inexpensive liquid- phase deposition (LPD) method is employed to introduce nanoscale silica hemispheres on sapphire substrates for fabri- cating a nano-patterned sapphire substrate (NPSS). Compared with GaN grown on sapphire without any pattern, the NPSS-GaN film is of much better quality as observed by scanning electron microscopy, transmission electron-microscopy, X-ray diffraction, cathodoluminescence, and photoluminescence. This is because GaN is initiated from the c-plane instead of the LPD-silica surface. In addition, many dislocations within the NPSS-GaN bend toward the patterns, or end at the GaN/void interfaces." @default.
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• W2320243641 date "2012-01-01" @default.
• W2320243641 modified "2023-09-24" @default.
• W2320243641 title "Improvement of Epitaxy GaN Quality Using Liquid-Phase Deposited Nano-Patterned" @default.
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