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- W2320642867 abstract "Challenges in eliminating metallic from semiconducting single-walled carbon nanotubes (SWCNTs) and in controlling their alignment have limited the development of high-performance SWCNT-based field-effect transistors (FETs). We recently pioneered an approach for depositing aligned arrays of ultra-high-purity semiconducting SWCNTs, isolated using polyfluorene derivatives, called dose-controlled floating evaporative self-assembly. Here, we tailor FETs fabricated from these arrays to achieve on-conductance (Gon) per width and an on–off ratio (Gon/Goff) of 261 μS/μm and 2 × 105, respectively, for a channel length (Lch) of 240 nm and 116 μS/μm and 1 × 106, respectively, for an Lch of 1 μm. We demonstrate 1400× greater Gon/Goff than SWCNT FETs fabricated by other methods, at comparable Gon per width of ∼250 μS/μm and 30–100× greater Gon per width at comparable Gon/Goff of 105–107. The average Gon per tube reaches 5.7 ± 1.4 μS at a packing density of 35 tubes/μm for Lch in the range 160–240 nm, limited by contact resistance. These gains highlight the promise of using ultra-high-purity semiconducting SWCNTs with controlled alignment for next-generation semiconductor electronics." @default.
- W2320642867 created "2016-06-24" @default.
- W2320642867 creator A5025875339 @default.
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- W2320642867 date "2014-11-13" @default.
- W2320642867 modified "2023-10-03" @default.
- W2320642867 title "Polyfluorene-Sorted, Carbon Nanotube Array Field-Effect Transistors with Increased Current Density and High On/Off Ratio" @default.
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- W2320642867 doi "https://doi.org/10.1021/nn5048734" @default.
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