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- W2321090280 abstract "An approach to achieve improved performance in pentacene-based organic field effect transistors (OFETs) using high-<italic>k</italic> AlO<sub>x</sub> prepared by a low temperature sol–gel technique as a thin buffer layer on a SiO<sub>2</sub> gate dielectric was demonstrated." @default.
- W2321090280 created "2016-06-24" @default.
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- W2321090280 date "2016-01-01" @default.
- W2321090280 modified "2023-09-26" @default.
- W2321090280 title "Low-temperature sol–gel processed AlO<sub>x</sub> gate dielectric buffer layer for improved performance in pentacene-based OFETs" @default.
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- W2321090280 doi "https://doi.org/10.1039/c6ra02700h" @default.
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