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• W2321818646 startingPage "17481" @default.
• W2321818646 abstract "Highly conductive indium oxide films, electrically more conductive than commercial sputtered indium tin oxide films films, were deposited using a new liquid precursor Et2InN(SiMe3)2 and H2O by atomic layer deposition (ALD) at 225–250 °C. Film resistivity can be as low as 2.3 × 10–4–5.16 × 10–5 Ω·cm (when deposited at 225–250 °C). Optical transparency of >80% at wavelengths of 400–700 nm was obtained for all the deposited films. A self-limiting ALD growth mode was found 0.7 Å/cycle at 175–250 °C. X-ray photoelectron spectroscopy depth profile analysis showed pure indium oxide thin film without carbon or any other impurity. The physical and chemical properties were systematically analyzed by transmission electron microscopy, electron energy loss spectroscopy, X-ray diffraction, optical spectrometer, and hall measurement; it was found that the enhanced electrical conductivity is attributed to the oxygen deficient InOx phases." @default.
• W2321818646 created "2016-06-24" @default.
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• W2321818646 date "2014-10-07" @default.
• W2321818646 modified "2023-10-16" @default.
• W2321818646 title "Highly Conducting, Transparent, and Flexible Indium Oxide Thin Film Prepared by Atomic Layer Deposition Using a New Liquid Precursor Et₂InN(SiMe₃)₂" @default.
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• W2321818646 doi "https://doi.org/10.1021/am502085c" @default.
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• W2321818646 hasPublicationYear "2014" @default.
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