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- W2321833551 abstract "In over-etching condition with CHF3 and O2 gas mixture, organic thin films on semiconductor device remains in contact holes of silicon integrated circuit device. Test element group devices were fabricated under various etching conditions to study the effects of organic thin film characteristics. Currant versus voltage (I-V) curves were measured on the contact holes filled with chemical vapor deposited W as electrode material. I-V curve of the contact hole that was additionally etched with CHF3 and O2 gas mixture was not linear and similar to the characteristic of MM (Metal Insulator Metal) structure. A bright thin image with 2-3 nm thickness was found at the interface between silicon substrate and the contact hole by cross sectional transmission electron microscopic observation, which was attributed to the remnant organic thin film. By the emission microscopic observation, several contact holes showed optical emission with two small peaks in their emission spectra The non-linear I-V characteristics and the optical emission spectra were well explained as the properties of W/organic thin film/heavily doped silicon structure. As a result of electrical circuit simulation, the heavy signal delay was expected due to the MIM characteristics of the contact hole with organic thin film." @default.
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- W2321833551 date "1999-01-01" @default.
- W2321833551 modified "2023-09-27" @default.
- W2321833551 title "Effects of Organic Thin Films Remained in the Contact Holes of Semiconductor Devices." @default.
- W2321833551 doi "https://doi.org/10.2493/jjspe.65.592" @default.
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