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- W2322131566 abstract "Abstract We have investigated the structural and electrical properties of n-type doped Si 1− x Ge x epitaxial layers ( x = 24–26%) grown by chemical vapor deposition with conventional [SiH 2 Cl 2 (DCS)/GeH 4 ] and high-order (Si 2 H 6 /Ge 2 H 6 ) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si 1− x Ge x layer with Si 2 H 6 /Ge 2 H 6 grown at temperatures as low as 550 °C show good structural quality similar to that with DCS/GeH 4 grown at 615 °C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si 2 H 6 /Ge 2 H 6 . We found that post-deposition annealing at 200 °C for the Si 1− x Ge x epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors." @default.
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- W2322131566 date "2016-03-07" @default.
- W2322131566 modified "2023-09-25" @default.
- W2322131566 title "Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects" @default.
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- W2322131566 doi "https://doi.org/10.7567/jjap.55.04ej11" @default.
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