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• W2322363905 startingPage "10489" @default.
• W2322363905 abstract "Flexible transparent graphene-based field-effect transistors (Gr-FETs) were fabricated using large-area single-layer graphene synthesized through low-pressure chemical vapor deposition on a pretreated copper (Cu) foil, followed by transfer of the graphene from the Cu foil to a poly(ethylene terephthalate) (PET) substrate. The electropolishing method was adopted to smooth the surface of the Cu foil, which is a crucial factor because it affects the defect density of graphene films on the PET substrate after transfer and the electronic transport property of the graphene-based devices. The influence of the electropolishing process on the graphene properties was examined using a Raman spectroscope, a scanning electron microscope, and an optical microscope. When the electropolishing process was adopted to improve the graphene quality, the carrier mobility of the flexible transparent Gr-FETs was enhanced from 90 to 340 cm2/(V s). Furthermore, variation of the carrier mobility was lower than 10% when the bending radius of the flexible device was decreased from 6.0 to 1.0 cm." @default.
• W2322363905 created "2016-06-24" @default.
• W2322363905 creator A5003786571 @default.
• W2322363905 creator A5026684680 @default.
• W2322363905 date "2014-06-23" @default.
• W2322363905 modified "2023-09-27" @default.
• W2322363905 title "Enhancing the Electrical Properties of a Flexible Transparent Graphene-Based Field-Effect Transistor Using Electropolished Copper Foil for Graphene Growth" @default.
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• W2322363905 doi "https://doi.org/10.1021/am502020s" @default.
• W2322363905 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/24922088" @default.
• W2322363905 hasPublicationYear "2014" @default.
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