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• W2322385901 abstract "Atomic structure of interfaces between oxide layers and semiconductors is usually challenging to probe because of its buried nature. Here, we present a synchrotron photoemission approach to unveil the interface structure of BaO/Si(100), a prototype model of crystalline-oxide/semiconductor junctions, and demonstrate that such interface outspreads over four Si atomic planes and contains five different crystal sites for Si atoms, including three Si-O bonding sites. An atomic model is suggested for this system. Heating enhances Si diffusion and oxidation, but the junction still remains crystalline at 500 ifmmode^circelsetextdegreefi{}C, promising potential for integration of III-V films and Si(100)." @default.
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• W2322385901 date "2014-12-01" @default.
• W2322385901 modified "2023-10-16" @default.
• W2322385901 title "Atomic structure and thermally induced transformation of the crystalline BaO/Si(100) junction" @default.
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• W2322385901 doi "https://doi.org/10.1103/physrevb.90.235405" @default.
• W2322385901 hasPublicationYear "2014" @default.
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