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• W2323009071 abstract "LaF3 films in the 5–40 nm thickness range were grown on Si(111) by molecular beam epitaxy. The substrates were kept at 450 °C during deposition. The films were investigated by high-energy X-ray photoemission flanked by conventional X-ray photoemission, reflection high-energy electron diffraction, and atomic force microscopy. The film growth was layer-by-layer. The surface of the films presented flat terraces, ∼100 nm wide, separated by monatomic steps, reproducing the morphology of the substrate. La 3d, F 1s, O 1s, and Si 2p core levels and valence band were measured by high-energy photoemission to investigate the reactivity of the system and the surface and bulk composition of the films, following varying sample treatments (X-ray irradiation, sputtering, heating). The fresh prepared films resulted of high purity, with no traces of reaction or intermixing at the buried interface between the substrate and the trifluoride. The X-ray beam was seen to induce F depletion at the surface and promote oxide formation. F depletion enhancement was obtained through Ar ion sputtering. An irreversible variation of the film composition was finally observed for samples heated above 300 °C, with the development of La oxides and oxofluorides. These effects were related to the high mobility of F ions in the LaF3 lattice and to the high tendency of defects formation involving F sites." @default.
• W2323009071 created "2016-06-24" @default.
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• W2323009071 date "2014-05-05" @default.
• W2323009071 modified "2023-09-27" @default.
• W2323009071 title "High-Energy X-ray Photoemission and Structural Study of Ultrapure LaF₃ Superionic Conductor Thin Films on Si" @default.
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• W2323009071 doi "https://doi.org/10.1021/jp501474e" @default.
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