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- W2323626677 abstract "Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively ${mathrm{TbSi}}_{2}$ wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown." @default.
- W2323626677 created "2016-06-24" @default.
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- W2323626677 date "2016-03-08" @default.
- W2323626677 modified "2023-10-02" @default.
- W2323626677 title "Atomic size effects studied by transport in single silicide nanowires" @default.
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- W2323626677 doi "https://doi.org/10.1103/physrevb.93.125412" @default.
- W2323626677 hasPublicationYear "2016" @default.
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