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- W2323699776 abstract "Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3–100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory–Huggins interaction parameters (χ), which enable formation of <10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large χ and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date." @default.
- W2323699776 created "2016-06-24" @default.
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- W2323699776 date "2012-04-12" @default.
- W2323699776 modified "2023-10-12" @default.
- W2323699776 title "Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications" @default.
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- W2323699776 doi "https://doi.org/10.1021/nn300459r" @default.
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