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- W2323719824 endingPage "04EG09" @default.
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- W2323719824 abstract "Abstract To achieve both low power consumption and high-speed operation, we fabricated c -axis-aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO) field-effect transistors (FETs) with In-rich IGZO and common IGZO ( <?CDATA $text{In}:text{Ga}:text{Zn} = 1:1:1$?> in atomic ratio) active layers through a simple process using trench gates, and evaluated their characteristics. The results confirm that 60-nm-node IGZO FETs fabricated through a 450 °C process show an extremely low off-state current below the detection limit (at most 2 × 10 −16 A) even at a measurement temperature of 150 °C. The results also reveal that the FETs with the In-rich IGZO active layer show a higher on-state current than those with the common IGZO active layer and have excellent frequency characteristics with a cutoff frequency and a maximum oscillation frequency of up to 20 and 6 GHz, respectively. Thus, we demonstrated that CAAC-IGZO FETs with trench gates are promising for achieving both low power consumption and high-speed operation." @default.
- W2323719824 created "2016-06-24" @default.
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- W2323719824 date "2016-03-22" @default.
- W2323719824 modified "2023-10-05" @default.
- W2323719824 title "Properties of c-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process" @default.
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- W2323719824 doi "https://doi.org/10.7567/jjap.55.04eg09" @default.
- W2323719824 hasPublicationYear "2016" @default.
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