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- W2324018051 abstract "We report on the lattice location of Mn in wurtzite GaN using ${ensuremath{beta}}^{ensuremath{-}}$ emission channeling. In addition to the majority substituting for Ga, we locate up to 20$%$ of the Mn atoms in N sites. We propose that the incorporation of Mn in N sites is enabled under sufficiently high concentrations of N vacancies, and stabilized by a highly charged state of the Mn cations. Since N substitution by Mn impurities in wurtzite GaN has never been observed experimentally or even considered theoretically before, it challenges the current paradigm of transition metal incorporation in wide-gap dilute magnetic semiconductors." @default.
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- W2324018051 date "2012-11-05" @default.
- W2324018051 modified "2023-10-05" @default.
- W2324018051 title "Evidence of N substitution by Mn in GaN" @default.
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- W2324018051 doi "https://doi.org/10.1103/physrevb.86.195202" @default.
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