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- W2324179634 abstract "Significance One of the key strategies for obtaining higher superconducting critical temperature ( T c ) is to dope carriers into an insulator parent material with strong electron correlation. Here, we examined electrostatic carrier doping to insulator-like thin (∼10-nm-thick) FeSe epitaxial films using an electric double-layer transistor (EDLT) structure. The maximum T c obtained is 35 K, which is 4× higher than that of bulk FeSe. This result demonstrates that EDLTs are useful tools to explore the ultimate T c for insulating parent materials, and opens a way to explore high- T c superconductivity, where carrier doping is difficult by conventional chemical substitution." @default.
- W2324179634 created "2016-06-24" @default.
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- W2324179634 date "2016-03-28" @default.
- W2324179634 modified "2023-10-16" @default.
- W2324179634 title "Electric field-induced superconducting transition of insulating FeSe thin film at 35 K" @default.
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- W2324179634 doi "https://doi.org/10.1073/pnas.1520810113" @default.
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