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• W2324987229 startingPage "6175" @default.
• W2324987229 abstract "Graphene being a zero band gap material hinders the use of its intrinsic form for many applications requiring a moderate band gap, such as field effect transistors and optoelectronic devices. Here we demonstrate a scalable method based on chemical vapor deposition for the direct growth of well-registered graphene nanoribbons on SiO(2) substrates with precise control over their width, length, and position. The width of the graphene nanoribbons (∼20 nm) is defined by the thickness of catalyst film, therefore avoiding the diffraction limit of conventional optical lithographic methods. The carrier mobility (over 1000 cm(2)/V·s) is higher than those previously reported graphene nanoribbons fabricated on SiO(2) substrates, thanks to the present transfer-free and contaminant-free direct growth process. This method overcomes many practical limitations of the previously demonstrated methods for the patterning of graphene nanoribbons and is compatible with large-scale fabrication of graphene nanoelectronics." @default.
• W2324987229 created "2016-06-24" @default.
• W2324987229 creator A5005487861 @default.
• W2324987229 creator A5052350967 @default.
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• W2324987229 date "2012-11-12" @default.
• W2324987229 modified "2023-10-16" @default.
• W2324987229 title "Direct Growth of Graphene Nanoribbons for Large-Scale Device Fabrication" @default.
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• W2324987229 doi "https://doi.org/10.1021/nl302993m" @default.
• W2324987229 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/23134072" @default.
• W2324987229 hasPublicationYear "2012" @default.
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