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• W2325221458 startingPage "2830" @default.
• W2325221458 abstract "Simulations of the SEB hardness of power MOSFETs are carried out with an experimentally calibrated structure. The effects of incorporating high permittivity gate dielectric layers and increasing channel doping concentration are investigated. The simulation results indicate that high-k dielectrics and high channel doping are promising methods to achieve SEB-hardened power MOSFETs. This offers a potential path to power MOSFETs that are resistant to SEB with thinner, more radiation-tolerant gate dielectrics." @default.
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• W2325221458 date "2015-12-01" @default.
• W2325221458 modified "2023-09-27" @default.
• W2325221458 title "SEB Hardened Power MOSFETs With High-K Dielectrics" @default.
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• W2325221458 doi "https://doi.org/10.1109/tns.2015.2498145" @default.
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