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• W2325274567 abstract "We characterized the electrical properties of a field-effect transistor (FET) and a nonvolatile memory device based on a solution-processable low bandgap small molecule, Si1TDPP-EE-C6. The small molecule consisted of electron-rich thiophene-dithienosilole-thiophene (Si1T) units and electron-deficient diketopyrrolopyrrole (DPP) units. The as-spun Si1TDPP-EE-C6 FET device exhibited ambipolar transport properties with a hole mobility of 7.3 × 10–5 cm2/(V s) and an electron mobility of 1.6 × 10–5 cm2/(V s). Thermal annealing at 110 °C led to a significant increase in carrier mobility, with hole and electron mobilities of 3.7 × 10–3 and 5.1 × 10–4 cm2/(Vs), respectively. This improvement is strongly correlated with the increased film crystallinity and reduced π–π intermolecular stacking distance upon thermal annealing, revealed by grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM) measurements. In addition, nonvolatile memory devices based on Si1TDPP-EE-C6 were successfully fabricated by incorporating Au nanoparticles (AuNPs) as charge trapping sites at the interface between the silicon oxide (SiO2) and cross-linked poly(4-vinylphenol) (cPVP) dielectrics. The device exhibited reliable nonvolatile memory characteristics, including a wide memory window of 98 V, a high on/off-current ratio of 1 × 103, and good electrical reliability. Overall, we demonstrate that donor–acceptor-type small molecules are a potentially important class of materials for ambipolar FETs and nonvolatile memory applications." @default.
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• W2325274567 date "2014-04-18" @default.
• W2325274567 modified "2023-10-12" @default.
• W2325274567 title "High Crystalline Dithienosilole-Cored Small Molecule Semiconductor for Ambipolar Transistor and Nonvolatile Memory" @default.
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• W2325274567 doi "https://doi.org/10.1021/am500080p" @default.
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