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- W2327233708 abstract "青色発光材料の一例としてレーザーダイオード作製のキーポイントとなるZnCdSe/ZnSe超格子を取り上げ,分子線エピタキシーでの成長条件およびその光学的特性について記述する。成長条件検討をもとに作製したレーザーダイオードの特性を紹介し,最後に,室温連続発振に向けて解決すべき課題について論じる。" @default.
- W2327233708 created "2016-06-24" @default.
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- W2327233708 date "1993-01-01" @default.
- W2327233708 modified "2023-09-25" @default.
- W2327233708 title "Epitaxial Growth of ZnCdSe/ZnSe Quantum Well Structure and Its Application to Laser Diode." @default.
- W2327233708 cites W1971470127 @default.
- W2327233708 doi "https://doi.org/10.1380/jsssj.14.70" @default.
- W2327233708 hasPublicationYear "1993" @default.
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