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• W2327906603 abstract "Abstract Gradient stripe patterns of Single-Walled Carbon Nanotubes (SWCNTs) were fabricated by using the evaporation-induced self-assembly technique. Additionally, the nonvolatile thin-film transistors (TFTs) with SWCNTs and (Bi,Nd)4Ti3O12 (BNT) insulators were fabricated. The retention characteristics were investigated in Pt/SWCNTs/BNT/LaNiO3 and LaNiO3/SWCNTs/BNT/LaNiO3 structures. Results revealed that LaNiO3/SWCNTs/BNT/LaNiO3 TFTs demonstrate larger on-state current, wider memory window, better fatigue endurance performance and retention characteristics, compared with Pt/SWCNTs/BNT/LaNiO3 TFTs because of the involvement of the oxide conductive electrodes. These results suggest that the SWCNTs/BNT TFTs with LaNiO3 as the electrodes are suitable for next-generation nonvolatile memory devices and integrated circuits." @default.
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• W2327906603 date "2016-06-01" @default.
• W2327906603 modified "2023-10-17" @default.
• W2327906603 title "Top electrode-dependent retention characteristics of thin-film transistors with carbon nanotube/(Bi,Nd) 4 Ti 3 O 12 structure" @default.
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• W2327906603 doi "https://doi.org/10.1016/j.matdes.2016.04.003" @default.
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