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• W2328567982 abstract "This letter reports, for the first time, the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -passivated AlGaN/GaN high electron mobility transistors (HEMTs) by using the nonvacuum ultrasonic spray pyrolysis deposition (USPD) technique. The Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> was devised as the surface passivation layer to effectively suppress leakage current and to reduce RF drain current collapse. The surface oxide has been characterized by using electron spectroscopy for chemical analysis, energy-dispersive X-ray spectroscopy, and transmission electron microscopy (TEM). With respect to an unpassivated device, the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -passivated HEMT has demonstrated superior improvements of 24.2% in maximum drain-source current (I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DS,max</sub> ), 33.6% in maximum extrinsic transconductance (g <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m,max</sub> ), 46.8% in two-terminal breakdown voltage (BV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GD</sub> ), and 45.3% in three-terminal off-state breakdown voltage (BV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</sub> ). The corresponding improvements achieved are 9.1%, 16.1%, 61.3%, and 55.7% for I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DS,max, gm,max,</sub> BV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GD</sub> , and BV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>off</sub> , respectively, as compared with passivation in Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> HEMTs. Besides, reduced interface density (Dit) and about two-order decreases in the leakage current are also achieved in the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -MOS diode using USPD with respect to a Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> -MIS diode." @default.
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• W2328567982 date "2014-09-01" @default.
• W2328567982 modified "2023-10-18" @default.
• W2328567982 title "Al₂O₃-Passivated AlGaN/GaN HEMTs by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition Technique" @default.
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• W2328567982 doi "https://doi.org/10.1109/led.2014.2333059" @default.
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