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• W2328629168 abstract "The authors report the fabrication of amorphous IGZO (a-IGZO) phototransistors with a thin Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> layer. It was found that the performances of the phototransistors depend strongly on the oxygen partial pressure during the deposition of the Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> layer. It was also found that the fabricated devices exhibited good electrical properties with electron mobility (μ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>FE</sub> ) of 13.2 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s, subthreshold swing (SS) of 0.13 V/decade, and ON/OFF current ratio> 5 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> . Furthermore, it was found that two cutoffs exist in the devices prepared with 25% oxygen partial pressure. The deep-ultraviolet (UV)-to-visible rejection ratio and near-UV-to-visible rejection ratio of the fabricated phototransistors were 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> and 20, respectively." @default.
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• W2328629168 date "2014-11-01" @default.
• W2328629168 modified "2023-10-16" @default.
• W2328629168 title "Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga₂O₃ Layer" @default.
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• W2328629168 doi "https://doi.org/10.1109/jstqe.2014.2330604" @default.
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