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- W232919634 abstract "The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on <TEX>$SiO_{2}$</TEX>/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by <TEX>$CHF_{3}$</TEX> gas, which can form a polymer as a function of side wall protective layers, with additive <TEX>$O_{2}$</TEX> and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at a lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from <TEX>$20;{AA}/min$</TEX> to <TEX>$400;{AA}/min$</TEX> by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % <TEX>$O_{2}$</TEX> and 16 % Ar with the <TEX>$CHF_{3}$</TEX> reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications." @default.
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- W232919634 date "2007-05-31" @default.
- W232919634 modified "2023-10-18" @default.
- W232919634 title "A study on polycrystalline 3C-SiC etching with magnetron applied reactive ion etching for M/NEMS applications" @default.
- W232919634 cites W2003829426 @default.
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- W232919634 doi "https://doi.org/10.5369/jsst.2007.16.3.197" @default.
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