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• W2329885268 abstract "Developing structures that provide excellent light absorption while keeping a high surface passivation quality is a mandatory issue for crystalline Si solar cells. In this study, Si nanowires grown on crystalline Si wafers using plasma-enhanced chemical vapor deposition (PECVD) are used as nanostructures for an efficient light absorption. Two types of stacks with direct or decoupled growth of nanowires on crystalline Si have been studied in order to identify their influence on the light absorption, as well as on the passivation quality. By choosing appropriately the stack configuration and carefully adjusting parameters such as silicon nitride thickness, Si nanowire diameters, and lengths, we have obtained an effective carrier lifetime up to 1.7 ms. Moreover, modeling has shown that a photogeneration density above 41 mA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> can be expected in the c-Si wafer." @default.
• W2329885268 created "2016-06-24" @default.
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• W2329885268 date "2016-07-01" @default.
• W2329885268 modified "2023-09-25" @default.
• W2329885268 title "Excellent Surface Passivation and Light Absorption in Crystalline Si via Low-Temperature Si Nanowire Growth" @default.
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• W2329885268 doi "https://doi.org/10.1109/jphotov.2016.2547585" @default.
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