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• W2330165616 startingPage "04EF13" @default.
• W2330165616 abstract "Abstract We propose novel circuit techniques for 1 clock (1CLK) 1 read/1 write (1R/1W) 2-port static random-access memories (SRAMs) to improve read access time (tAC) and write margins at low voltages. Two-stage read boost (TSR-BST) and write word line boost (WWL-BST) after the read sensing schemes have been proposed. TSR-BST reduces the worst read bit line (RBL) delay by 61% and RBL amplitude by 10% at V DD = 0.5 V, which improves tAC by 39% and reduces energy dissipation by 11% at V DD = 0.55 V. WWL-BST after read sensing scheme improves minimum operating voltage ( V min ) by 140 mV. A 32 kbit 1CLK 1R/1W 2-port SRAM with TSR-BST and WWL-BST has been developed using a 40 nm CMOS." @default.
• W2330165616 created "2016-06-24" @default.
• W2330165616 creator A5008563407 @default.
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• W2330165616 date "2016-03-23" @default.
• W2330165616 modified "2023-09-27" @default.
• W2330165616 title "39% access time improvement, 11% energy reduction, 32 kbit 1-read/1-write 2-port static random-access memory using two-stage read boost and write-boost after read sensing scheme" @default.
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• W2330165616 doi "https://doi.org/10.7567/jjap.55.04ef13" @default.
• W2330165616 hasPublicationYear "2016" @default.
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