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- W2331279968 abstract "The paper presents the methods of obtaining photovoltaic structures based on Cd X Hg 1-X Te graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperature diffusion of acceptor impurity (As) in intrinsically defective material of n-type conductivity as well as ion introducing the donor impurity (B) in uniformly doped during the epitaxy process material of p-type of conductivity have been used. The possibility of creating multi-element graded-band-gap photovoltaic structures suitable for broad band detection of infrared radiation as a result of epitaxial growth by evaporation-condensation-diffusion method has been demonstrated." @default.
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- W2331279968 date "2016-03-01" @default.
- W2331279968 modified "2023-09-23" @default.
- W2331279968 title "Barrier Structures on the Basis of Graded-Band-Gap CdHgTe Obtained by Evaporation-Condensation-Diffusion Method" @default.
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- W2331279968 doi "https://doi.org/10.1515/amm-2016-0022" @default.
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